APTGT150X120E3G
A
P
T
G
T
150
X
120E
3
G
– R
e
v 1 J
a
nua
r
y, 2006

APT website – http://www.advancedpower.com
1 - 5








Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 220
I
C
Continuous Collector Current
T
C
= 80°C 150
I
CM
Pulsed Collector Current T
C
= 25°C 350
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 700 W
RBSOA Reverse Bias Safe Operating Area T
j
= 125°C 300A @ 1150V




These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.







13
14
1719 15
89 110 12
21
20
563412 7

V
CES
= 1200V
I
C
= 150A @ Tc = 80°C
Application
• AC Motor control

Features
• Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration

Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive T
C
of V
CEsat

• Low profile
• RoHS complaint

3 Phase bridge
Trench + Field Stop IGBT
®

Power Module