APTGT100TDU60P
器件描述:Triple Dual Common Source Trench + Field Stop IGBT Power Module
文件大小:284.2KB,共5页
Sponsor by e络盟
器件资料摘要:
APTGT100TDU60P
A
P
T
G
T
100
T
D
U
60P
– R
e
v 0 M
a
y, 2005
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
E5/ E6
G5
E5
E3/ E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3
E5
G5
C 5C 3
G3
E5/E6
E3
E6
G6
C 4 C 6
E4
G4
E1
E1/E2 E3/E4
C 1
G1
G2
E2
C 2
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C 150
I
C
Continuous Collector Current
T
C
= 80°C 100
I
CM
Pulsed Collector Current T
C
= 25°C 200
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 340 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 200A @ 550V
V
CES
= 600V
I
C
= 100A @ Tc = 80°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple Dual Common Source
Trench + Field Stop IGBT
®
Power Module