APTGF150X60TE3G
器件描述:3 Phase bridge NPT IGBT Power Module
文件大小:297.25KB,共5页
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器件资料摘要:
APTGF150X60TE3G
A
P
T
G
F
150
X
60T
E
3
G
– R
e
v 2 A
p
r
i
l
,
2006
APT website – http://www.advancedpower.com
1 - 5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C 225
I
C
Continuous Collector Current
T
C
= 80°C 150
I
CM
Pulsed Collector Current T
C
= 25°C 450
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 700 W
RBSOA Reverse Bias Safe Operating Area T
j
= 125°C 400A@480V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
T1
R
T2
Q5
11
12
Q6
9
10
V
8
Q2
5
6
U
Q1
W
1
P+
2
N-
4
3
Q3
Q4
7
1516
17
13
14
879110
1819
56341
21
20
122
V
CES
= 600V
I
C
= 150A @ Tc = 80°C
Application
• AC Motor control
Features
• Non Punch Through (NPT) Fast IGBT
®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive T
C
of V
CEsat
• Low profile
• RoHS Compliant
3 Phase bridge
NPT IGBT Power Module