APTGF75H120TG
A
P
T
G
F
7
5
H
120T
G
–
R
e
v 1 J
a
nua
r
y, 2006

APT website – http://www.advancedpower.com
1 - 5










Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
c
= 25°C 100
I
C
Continuous Collector Current
T
c
= 80°C 75
I
CM
Pulsed Collector Current T
c
= 25°C 150
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
c
= 25°C 500 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 150A @ 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
OUT1 OUT2
Q3
Q4
E3
G3
0/VBUS
E4
G4
NTC2
G2
E2
NTC1
Q2
Q1
G1
E1








OUT1
OUT2
NTC1
NTC2
G3
E3
VBUS
G1
E1
G4
G2
E2
0/VBUS
E4

V
CES
= 1200V
I
C
= 75A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive T
C
of V
CEsat

• Low profile
• RoHS compliant
Full - Bridge
NPT IGBT Power Module