APTGF75DSK120T
A
P
T
G
F
7
5
D
S
K
120
T
– R
e
v 0 J
a
nua
r
y, 2005

APT website – http://www.advancedpower.com
1 - 5









Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
c
= 25°C 100
I
C
Continuous Collector Current
T
c
= 80°C 75
I
CM
Pulsed Collector Current T
c
= 25°C 150
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
c
= 25°C 500 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 150A @ 1200V


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q2Q1
E1
G1
VBUS
OUT2OU T1
0/VBUS NTC2
0/VBUS SENSE
G2
E2
NTC1
0/VBUS SENSE






OUT2
OUT1
NTC2
NTC1
G2
VBUS
E2
E1
G1
0/VBUS
SENSE
0/VBUS
0/VBUS
SENSE

V
CES
= 1200V
I
C
= 75A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies

Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile



Dual Buck Chopper
NPT IGBT Power Module