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APTGF50TDU120P

器件描述:Triple dual Common Source NPT IGBT Power Module
器件厂商:ADPOW [Advanced Power Technology]
文件大小:318.64KB,共6页
Sponsor by e络盟
器件资料摘要:
APTGF50TDU120P
A
P
T
G
F
5
0
T
D
U
120
P
– R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website – http://www.advancedpower.com
1 - 6
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability









Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
E5/ E6
G5
E5
E3/ E4
C5
G3
C6
E6
G6
C2
E2
G2
C4
E4
G4
E1
C1
G1
E1/E2
C3
E3








E5
G5
C 5C 3
G3
E5/E6
E3
E6
G6
C 4 C 6
E4
G4
E1
E1/E2 E3/E4
C 1
G1
G2
E2
C 2

Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
c
= 25°C 75
I
C
Continuous Collector Current
T
c
= 80°C 50
I
CM
Pulsed Collector Current T
c
= 25°C 150
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
c
= 25°C 312 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 150A @ 1200V
V
CES
= 1200V
I
C
= 50A @ Tc = 80°C
Triple dual Common Source
NPT IGBT Power Module