APTGF50DDA60T3G
A
P
T
G
F
5
0
D
D
A
60T
3G
–
R
e
v 1 N
ove
m
b
e
r
, 2005

APT website – http://www.advancedpower.com
1 - 6










Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C 65
I
C
Continuous Collector Current
T
C
= 80°C 50
I
CM
Pulsed Collector Current T
C
= 25°C 230
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 250 W
RBSOA Reverse Bias Safe Operating Area T
j
= 125°C 100A@500V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
23
22
13
Q1
CR 1
30
8
Q2
7
14
CR2
16
R1
29
15
26
27
4
3
31 32


16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4

All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
V
CES
= 600V
I
C
= 50A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Non Punch Through (NPT) Fast IGBT
®

- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring

Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
single boost of twice the current capability
• RoHS compliant

Dual Boost chopper
NPT IGBT Power Module