APTGF150DU120T
A
P
T
G
F
150
D
U
120T
–
R
e
v 0 J
a
nua
r
y, 2005

APT website – http://www.advancedpower.com
1 - 5









Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
c
= 25°C 200
I
C
Continuous Collector Current
T
c
= 80°C 150
I
CM
Pulsed Collector Current T
c
= 25°C 300
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
c
= 25°C 961 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 300A @ 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
C2
Q2
NT C1
Q1
E
C1
E1
G1
NTC2
E2
G2













C1 C2
C2
NTC2
NTC1
E1
E
G2
E2
G2
E2
G1

V
CES
= 1200V
I
C
= 150A @ Tc = 80°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile


Dual common source
NPT IGBT Power Module