APTC60HM70SCTG
A
P
T
C
60
H
M
70S
C
T
G
–
R
e
v 2 O
c
t
obe
r
,
2005
APT website – http://www.advancedpower.com 1 – 8







OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3BCR1B
G2
S2
NTC1
CR2B
Q2
CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS






OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4

Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 600 V
T
c
= 25°C 39
I
D
Continuous Drain Current
T
c
= 80°C 29
I
DM
Pulsed Drain current 156
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 70
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 250 W
I
AR
Avalanche current (repetitive and non repetitive) 20 A
E
AR
Repetitive Avalanche Energy 1
E
AS
Single Pulse Avalanche Energy 1800
mJ
V
DSS
= 600V
R
DSon
= 70mΩ max @ Tj = 25°C
I
D
= 39A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
•

- Ul tra low R
DSon

- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated

• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF

• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS complaint
Full - Bridge
Series & SiC parallel diodes
Super Junction
MOSFET Power Module