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APTC60HM35T3

器件描述:Full - Bridge Super Junction MOSFET Power Module
器件厂商:ADPOW [Advanced Power Technology]
文件大小:338.1KB,共6页
Sponsor by e络盟
器件资料摘要:
APTC60HM35T3
A
P
T
C
60
H
M
35T
3 – R
e
v 0 S
e
pt
e
m
be
r
,
2004
APT website – http://www.advancedpower.com 1 - 6







11
Q4
1413
23
Q2
10
8
7
3
4
22
29 31
R1
15 16
32
26
19
18
Q1 Q3
27
30


16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4

All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …

Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 600 V
T
c
= 25°C 72
I
D
Continuous Drain Current
T
c
= 80°C 54
I
DM
Pulsed Drain current 200
A
V
GS
Gate - Source Voltage ±20 V
R
DSon
Drain - Source ON Resistance 35
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 416 W
I
AR
Avalanche current (repetitive and non repetitive) 20 A
E
AR
Repetitive Avalanche Energy 1
E
AS
Single Pulse Avalanche Energy 1800
mJ
V
DSS
= 600V
R
DSon
= 35mΩ max @ Tj = 25°C
I
D
= 72A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features


- Ul tra low R
DSon

- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
Super Junction MOSFET
Power Module