050-4930 Rev A 2-2006
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
RF POWER MOSFET
N- CHANNEL ENHANCEMENT MODE 165V 150W 150MHz
The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI
power amplifiers up to 150MHz.
• Specified 125 Volt, 81MHz Characteristics:
• Output Power = 150 Watts.
• Gain = 13dB (Class AB)
• Efficiency = 50%
• High Voltage Breakdown and Large SOA
for Superior Ruggedness.
• Industry standard package
• Low Vth thermal coefficient
ARF521
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
APT
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS
(ON)
I
DSS
I
GSS
g
fs
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
Drain-Source On-State Resistance
1
(I
D
(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 15V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 200mA)
MIN TYP MAX
500
0.56 8
25
250
±100
3 3.6
24
UNIT
Volts
Ohms
µA
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF521
500
10
±30
250
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
°C
V
GS
(TH)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN TYP MAX
0.60
0.1
UNIT
°C/W