MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
RF POWER MOSFETs
N- CHANNEL ENHANCEMENT MODE 200V 300W 45MHz
The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been optimized
for both linear and high efficiency classes of operation.
• Specified 150 Volt, 40.68 MHz Characteristics:
• Output Power = 300 Watts.
• Gain = 16dB (Class AB)
• Efficiency = 75% (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
Drain-Source On-State Resistance
1
(V
GS

= 10V
,
I
D
= 6.5A
)
Zero Gate Voltage Drain Current (V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 6.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
MIN TYP MAX
1000
0.90
25
250
±100
3.3 7 9
24
UNIT
Volts
ohms
µA
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF466A_B
1000
1000
13
±30
357
0.35
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
ARF466A
ARF466B
TO-264
Common
Source
050-4925 Rev C 8-2005
G
D
S