050-5930 Rev A 6-2003
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
RF POWER MOSFET
N- CHANNEL ENHANCEMENT MODE 165 V 150 W 100 MHz
The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power
amplifiers up to 100 MHz.
• Specified 125 Volt, 81 MHz Characteristics:
• Output Power = 150 Watts.
• Gain = 13dB (Class AB)
• Efficiency = 50%
• High Voltage Breakdown and Large SOA
for Superior Ruggedness.
• Industry standard package
• Low Vth thermal coefficient
ARF520
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
G
D
S
APT


STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Voltage

1
(I
D
(ON)
= 5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 50V, V
GS
= 0, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN TYP MAX
500
4
25
250
±100
46
35
UNIT
Volts
µA
nA
mhos
Volts
Symbol
V
DSS
I
D
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF520
500
10
±30
250
-55 to 200
300
UNIT
Volts
Amps
Volts
Watts
°C
V
GS
(TH)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θCS
Characteristic
Junction to Case
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN TYP MAX
0.7
0.1
UNIT
°C/W