050-4924 Rev B 3-2006
TO-247
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
V
DS
(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Voltage

1
(I
D
(ON) = 4.5A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 4.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 50mA)
MIN TYP MAX
500
5.0
25
250
±100
234
35
UNIT
Volts
µA
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF463A_BP1(G)
500
500
9
±30
180
0.70
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
RF POWER MOSFETs
N- CHANNEL ENHANCEMENT MODE
The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 125 Volt, 81.36MHz Characteristics:
• Output Power = 100 Watts.
• Gain = 15dB (Class AB)
• Efficiency = 75% (Class C)
• Low Cost Common Source RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
Common
Source
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
ARF463AP1 ARF463BP1
ARF463AP1G* ARF463BP1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
125V 100A 100MHz
G
D
S