APTM50UM19S
A
P
T
M
50U
M
19S
– R
e
v 1
M
a
y,
2004
APT website – http://www.advancedpower.com 1 – 7








D
Q1
G
S
CR1SK









Absolute maximum ratings




These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 500 V
T
c
= 25°C 163
I
D
Continuous Drain Current
T
c
= 80°C 122
I
DM
Pulsed Drain current 652
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 19
mg87
P
D
Maximum Power Dissipation T
c
= 25°C 1136 W
I
AR
Avalanche current (repetitive and non repetitive) 46 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 2500
mJ
V
DSS
= 500V
R
DSon
= 19mΩ max @ Tj = 25°C
I
D
= 163A @ Tc = 25°C
Application

g183g32 Motor control
g183g32 Switched Mode Power Supplies
g183g32 Uninterruptible Power Supplies


Features

g183g32 Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
g183g32 Kelvin source for easy drive
g183g32 Low stray inductance
- M6 power connectors
- M4 signal connectors
g183g32 High level of integration


Benefits

g183g32 Outstanding performance at high frequency operation
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
Single switch
Series & parallel diodes
MOSFET Power Module