APTM50HM75SCT
A
P
T
M
50H
M
75S
C
T
–
R
e
v 1
M
a
y
,
2004
APT website – http://www.advancedpower.com 1 – 7







OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3BCR1B
G2
S2
NTC1
CR2B
Q2
CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS






OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4


Absolute maximum ratings



















These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 500 V
T
c
= 25°C 46
I
D
Continuous Drain Current
T
c
= 80°C 34
I
DM
Pulsed Drain current 184
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 75
mg87
P
D
Maximum Power Dissipation T
c
= 25°C 357 W
I
AR
Avalanche current (repetitive and non repetitive) 46 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 2500
mJ
V
DSS
= 500V
R
DSon
= 75mg87 max @ Tj = 25°C
I
D
= 46A @ Tc = 25°C
Application
g183g32 Motor control
g183g32 Switched Mode Power Supplies
g183g32 Uninterruptible Power Supplies

Features
g183g32 Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated

g183g32 Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF

g183g32 Kelvin source for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
g183g32 Internal thermistor for temperature monitoring
g183g32 High level of integration

Benefits

g183g32 Outstanding performance at high frequency operation
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Solderable terminals both for power and signal for
easy PCB mounting
g183g32 Low profile
Full bridge
Series & SiC parallel diodes
MOSFET Power Module