APTM50DUM38T
A
P
T
M
50D
U
M
38T
– R
e
v 2

M
a
y,
2004
APT website – http://www.advancedpower.com 1 – 6









S
Q1 Q2
D2
S2S1
G1
G2
D1
NTC1 NTC2




D2
NTC2
D2
S1
D1
NTC1
S2
G2
S2
G2
S
G1




Absolute maximum ratings



These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 500 V
T
c
= 25°C 90
I
D
Continuous Drain Current
T
c
= 80°C 67
I
DM
Pulsed Drain current 360
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 38
mg87
P
D
Maximum Power Dissipation T
c
= 25°C 694 W
I
AR
Avalanche current (repetitive and non repetitive) 46 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 2500
mJ
V
DSS
= 500V
R
DSon
= 38mg87 max @ Tj = 25°C
I
D
= 90A @ Tc = 25°C
Application
g183g32 AC Switches
g183g32 Switched Mode Power Supplies
g183g32 Uninterruptible Power Supplies

Features
g183g32 Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
g183g32 Kelvin source for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
g183g32 Internal thermistor for temperature monitoring
g183g32 High level of integration

Benefits
g183g32 Outstanding performance at high frequency operation
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Solderable terminals both for power and signal for
easy PCB mounting
g183g32 Low profile
Dual common source
MOSFET Power Module