APTM50DHM38
A
P
T
M
50D
H
M
38 – R
e
v 2
A
p
r
i
l
,
2004
APT website – http://www.advancedpower.com 1 – 6









S4
G4
VBUS 0/VBUS
S1
G1
OUT1
OUT2



Absolute maximum ratings





These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 500 V
T
c
= 25°C 90
I
D
Continuous Drain Current
T
c
= 80°C 67
I
DM
Pulsed Drain current 360
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 38
mg87
P
D
Maximum Power Dissipation T
c
= 25°C 694 W
I
AR
Avalanche current (repetitive and non repetitive) 46 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 2500
mJ
V
DSS
= 500V
R
DSon
= 38mg87 max @ Tj = 25°C
I
D
= 90A @ Tc = 25°C
Application

g183g32 Welding converters
g183g32 Switched Mode Power Supplies
g183g32 Switched Reluctance Motor Drives

Features

g183g32 Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
g183g32 Kelvin source for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- M5 power connectors
g183g32 High level of integration

Benefits

g183g32 Outstanding performance at high frequency operation
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Low profile

Asymmetrical - bridge
MOSFET Power Module