APTM20HM16FT
A
P
T
M
20H
M
16F
T
– R
e
v 1


M
a
y,
2004
APT website – http://www.advancedpower.com 1 – 6







S3
G3
S4
G4
NTC2
S1
G1
OUT2OUT1
VBUS
Q1
Q2
S2
G2
0/VBU SNTC1
Q3
Q4




OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4


Absolute maximum ratings




These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 200 V
T
c
= 25°C 104
I
D
Continuous Drain Current
T
c
= 80°C 77
I
DM
Pulsed Drain current 416
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 16
mg87
P
D
Maximum Power Dissipation T
c
= 25°C 390 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 200V
R
DSon
= 16mg87 max @ Tj = 25°C
I
D
= 104A @ Tc = 25°C
Application
g183g32 Welding converters
g183g32 Switched Mode Power Supplies
g183g32 Uninterruptible Power Supplies

Features
g183g32 Power MOS 7
®
FREDFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
g183g32 Kelvin source for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
g183g32 Internal thermistor for temperature monitoring
g183g32 High level of integration

Benefits
g183g32 Outstanding performance at high frequency operation
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Solderable terminals both for power and signal for
easy PCB mounting
g183g32 Low profile
Full - Bridge
MOSFET Power Module