APTM20DHM20T
A
P
T
M
20D
H
M
20T
– R
e
v 2
M
a
y,
2004
APT website – http://www.advancedpower.com 1 – 6







NTC2
S4
G4
VBUS SENSE
VBUS
Q1
G1
S1
OUT1 OUT2
Q4
CR3
0/VBUS
CR2
0/VBUS SENSE
NTC1


NTC2
OUT2
OUT1
VBUS
VBUS
SENSE
S4
G4
S1
NTC1
0/VBUS
0/VBUS
SENSE
G1


Absolute maximum ratings




These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 200 V
T
c
= 25°C 89
I
D
Continuous Drain Current
T
c
= 80°C 66
I
DM
Pulsed Drain current 356
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 20
mg87
P
D
Maximum Power Dissipation T
c
= 25°C 357 W
I
AR
Avalanche current (repetitive and non repetitive) 89 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 2500
mJ
V
DSS
= 200V
R
DSon
= 20mg87 max @ Tj = 25°C
I
D
= 89A @ Tc = 25°C
Application
g183g32 Welding converters
g183g32 Switched Mode Power Supplies
g183g32 Switched Reluctance Motor Drives

Features
g183g32 Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
g183g32 Kelvin source for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
g183g32 Internal thermistor for temperature monitoring
g183g32 High level of integration

Benefits
g183g32 Outstanding performance at high frequency operation
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Solderable terminals both for power and signal for
easy PCB mounting
g183g32 Low profile
Asymmetrical - Bridge
MOSFET Power Module