APTGT75X120TE3
A
P
T
G
T
7
5
X
1
2
0
T
E
3

–

R
e
v

0





J
u
l
y
,

2
0
0
3

APT website – http://www.advancedpower.com 1 - 3










Absolute maximum ratings



These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.










1516
17
13
14
87 9 1110
1819
5 63 41
21
20
122
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 100 I
C Continuous Collector Current T
C = 80°C 75
ICM Pulsed Collector Current TC = 25°C 175
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 350 W
RBSOA Reverse Bias Operating Area Tj = 125°C 150A@1100V
VCES = 1200V
IC = 75A @ Tc = 80°C

Application

• AC Motor control

Features

• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring

Benefits

• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile

3 Phase bridge
Trench IGBT® Power Module