APTM20AM04F
A
P
T
M
20A
M
04F
– R
e
v 1

M
a
y,
2004
APT website – http://www.advancedpower.com 1 – 6











OUTVBUS
S1
G1
0/VBUS
G2
S2



Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 200 V
T
c
= 25°C 372
I
D
Continuous Drain Current
T
c
= 80°C 278
I
DM
Pulsed Drain current 1488
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 4
mg87
P
D
Maximum Power Dissipation T
c
= 25°C 1250 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 200V
R
DSon
= 4mg87 max @ Tj = 25°C
I
D
= 372A @ Tc = 25°C
Application

g183g32 Welding converters
g183g32 Switched Mode Power Supplies
g183g32 Uninterruptible Power Supplies
g183g32 Motor control

Features

g183g32 Power MOS 7
®
FREDFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
g183g32 Kelvin source for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- M5 power connectors
g183g32 High level of integration

Benefits

g183g32 Outstanding performance at high frequency operation
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Low profile
Phase leg
MOSFET Power Module