BUZ900X4S
BUZ901X4S
V
DSX
Drain – Source Voltage
V
GS
Gate – Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation @ T
case
= 25°C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
θJC
Thermal Resistance Junction – Case
BUZ900X4S BUZ901X4S
160V 200V
±14V
32A
32A
500W
–55 to 150°C
150°C
0.3°C/W
NEW PRODUCT UNDER DEVELOPMENT
MECHANICAL DATA
Dimensions in mm (inches)
1
34
2
R
38.0 (1.496)
38.2 (1.504)
30.1 (1.185)
30.3 (1.193)
14.9 (0.587)
15.1 (0.594)
3.3 (0.129)
3.6 (0.143)
7.8 (0.307)
8.2 (0.322)
31.5 (1.240)
31.7 (1.248)
4.0 (0.157)
(2 Places)
R =
4.0 (0.157)
4.2 (0.165)
)
)
4.1 (0.161
4.3 (0.169
4.8 (0.187)
4.9 (0.193)
(4 places)
W =
H =
8.9 (0.350)
9.6 (0.378)
11.8 (0.463)
12.2 (0.480)
Hex Nut M4
(4 places)
12.
6
(
0
.
4
9
6
)
12.
8
(
0
.
5
0
4
)
2
5
.
2 (
0
.
9
92
)
2
5
.
4 (
1
.
0
00
)
0.75 (0.030)
0.85 (0.033)
5.1 (0.201)
5.9 (0.232)
1.95 (0.077)
2.14 (0.084)
N–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE
SOT227
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
Pin 4 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Prelim. 4/94
TEC
MAGNA
Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
POWER MOSFETS FOR
AUDIO APPLICATIONS