BULB128D-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
a73 STMicroelectronics PREFERRED
SALESTYPE
a73 NPN TRANSISTOR
a73 HIGH VOLTAGE CAPABILITY
a73 LOW SPREAD OF DYNAMIC PARAMETERS
a73 MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
a73 VERY HIGH SWITCHING SPEED
a73 INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
a73 ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
a73 FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
®
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0) 700 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 400 V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
= 2 A, t
p
< 10µs, T
j
< 150
o
C)
V
(BR)EBO
V
I
C
Collector Current 4 A
ICM Collector Peak Current (tp < 5 ms) 8 A
IB Base Current 2 A
I
BM
Base Peak Current (t
p
< 5 ms) 4 A
Ptot Total Dissipation at Tc = 25
o
C70W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
1
2
3
I
2
PAK
(TO-262)

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