Publication Order Number:
BUL42D/D
 Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 1
1
BUL42D
High Speed, High Gain
Bipolar NPN Transistor
Integrating an
Antisaturation Network and
a Transient Voltage
Suppression Capability
The BUL42D is a state–of–the–art bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features:
• Free Wheeling Diode Built In
• Flat DC Current Gain
• Fast Switching Times and Tight Distribution
• “Six Sigma” Process Providing Tight and Reproducible Parameter
Spreads
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Sustaining Voltage V
CEO
400 Vdc
Collector–Base Breakdown Voltage V
CBO
700 Vdc
Collector–Emitter Breakdown Voltage V
CES
700 Vdc
Emitter–Base Voltage V
EBO
9 Vdc
Collector Current – Continuous
– Peak (Note 1)
I
C
I
CM
4.0
8.0
Adc
Base Current – Continuous
– Peak (Note 1)
I
B
I
BM
1.0
2.0
Adc
*Total Device Dissipation @ T
C
= 25 C
*Derate above 25 C
P
D
75
0.6
Watt
W/ C
Operating and Storage Temperature T
J
, T
stg
–65 to +150 C
TYPICAL GAIN
Typical Gain @ I
C
= 1 A, V
CE
= 2 V
Typical Gain @ I
C
= 0.3 A, V
CE
= 1 V
h
FE
h
FE
13
16
–
–
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance –
Junction–to–Case
R
θJC
1.66 °C/W
Thermal Resistance –
Junction–to–Ambient
R
θJA
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 seconds
T
L
260 °C
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
TO–220
CASE 221A
STYLE 1
4 AMPERES
700 VOLTS
75 WATTS
POWER TRANSISTOR
http://onsemi.com
MARKING
DIAGRAM
Y = Year
WW = Work Week
BUL
42D
YWW
Device Package Shipping
ORDERING INFORMATION
BUL42D TO–220 50 Units/Rail