APTGF50X120E3
器件描述:3 Phase bridge NPT IGBT Power Module
文件大小:209.4KB,共3页
Sponsor by e络盟
器件资料摘要:
APTGF50X120E3
A
P
T
G
F
5
0
X
1
2
0
E
3
–
R
e
v
0
J
u
l
y
,
2
0
0
3
APT website – http://www.advancedpower.com 1 - 3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
13
14
1719 15
8 9 1110 12
21
20
5 63 41 2 7
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 78 I
C Continuous Collector Current T
C = 80°C 50
ICM Pulsed Collector Current TC = 25°C 150
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 400 W
SCSOA Short Circuit Save Operating Area Tj = 125°C 500A@1200V
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
• AC Motor control
Features
• Non Punch Through (NPT) IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
3 Phase bridge
NPT IGBT Power Module