APTGF50DH120T
A
P
T
G
F
50D
H
120T
– R
e
v1 M
a
r
c
h,
2004
APT website – http://www.advancedpower.com
1-6
Application
g183g32 Welding converters
g183g32 Switched Mode Power Supplies
g183g32 Switched Reluctance Motor Drives

Features
g183g32 Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
g183g32 Kelvin emitter for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
g183g32 Internal thermistor for temperature monitoring
g183g32 High level of integration

Benefits
g183g32 Outstanding performance at high frequency
operation
g183g32 Stable temperature behavior
g183g32 Very rugged
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Solderable terminals both for power and signal for
easy PCB mounting
g183g32 Easy paralleling due to positive TC of VCEsat
g183g32 Low profile









Absolute maximum ratings




These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
Q4
OUT2OUT1
VBUS SENSE
CR3
0/VBUS
G4
E4
NTC2
Q1
CR2
0/VBUS SENSE
NTC1
G1
E1






NTC2
OUT1
OUT2
VBUS
VBUS
SENSE
E1
NTC1
E4
G4
0/VBUS
0/VBUS
SENSE
G1
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
c
= 25°C 75
I
C
Continuous Collector Current
T
c
= 80°C 50
I
CM
Pulsed Collector Current T
c
= 25°C 150
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation Tc = 25°C 312 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 150A @ 1200V
V
CES
= 1200V
I
C
= 50A @ Tc = 80°C
Asymmetrical - Bridge
NPT IGBT Power Module