APTGF50X120P2
器件描述:3 Phase bridge NPT IGBT Power Module
文件大小:237.07KB,共4页
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器件资料摘要:
APTGF50X120E2
APTGF50X120P2
A
P
T
G
F
5
0
X
1
2
0
E
2
(
P
2
)
–
R
e
v
0
N
o
v
e
m
b
e
r
,
2
0
0
3
APT website – http://www.advancedpower.com 1 - 4
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pin out: APTGF50X120E2 (Long pins)
V W P+
11 129 107 8
UN-
1 2 3 4 5 6
Pin out: APTGF50X120P2 (Short pins)
P+WVUN-
12109 11821 4 6 753
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 72 I
C Continuous Collector Current T
C = 80°C 50
ICM Pulsed Collector Current TC = 25°C 140
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 350 W
SCSOA Short Circuit Safe Operating Area Tj = 125°C 500A@1200V
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
• AC Motor control
Features
• Non Punch Through (NPT) IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
3 Phase bridge
NPT IGBT Power Module