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APTGF180H60

器件描述:Full - Bridge NPT IGBT Power Module
器件厂商:ADPOW [Advanced Power Technology]
文件大小:294.48KB,共6页
Sponsor by e络盟
器件资料摘要:
APTGF180H60
A
P
T
G
F
1
80H
60 – R
e
v 1 M
a
r
c
h,
2004

APT website – http://www.advancedpower.com
1-6










Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
c
= 25°C 220
I
C
Continuous Collector Current
T
c
= 80°C 180
I
CM
Pulsed Collector Current T
c
= 25°C 630
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation Tc = 25°C 833 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 630A @ 600V


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.


E2
G2
G4
E4
E3
G1
E1
0/VBUSVBUS
OUT2
OUT1
G3
V
CES
= 600V
I
C
= 180A @ Tc = 80°C
Application
g183g32 Welding converters
g183g32 Switched Mode Power Supplies
g183g32 Uninterruptible Power Supplies
g183g32 Motor control

Features
g183g32 Non Punch Through (NPT) THUNDERBOLT IGBT
®

- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
g183g32 Kelvin emitter for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- M5 power connectors
g183g32 High level of integration

Benefits
g183g32 Outstanding performance at high frequency
operation
g183g32 Stable temperature behavior
g183g32 Very rugged
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183 Easy paralleling due to positive TC of VCEsat
Full - bridge
NPT IGBT Power Module