APTGF180DU60T
A
P
T
G
F
180D
U
60T
– R
e
v 1 M
a
r
c
h
,
2004
APT website – http://www.advancedpower.com
1-6
Application
g183g32 AC Switches
g183g32 Switched Mode Power Supplies
g183g32 Uninterruptible Power Supplies

Features
g183g32 Non Punch Through (NPT) THUNDERBOLT IGBT
®

- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
g183g32 Kelvin emitter for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
g183g32 Internal thermistor for temperature monitoring
g183g32 High level of integration
Benefits
g183g32 Outstanding performance at high frequency
operation
g183g32 Stable temperature behavior
g183g32 Very rugged
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Solderable terminals both for power and signal for
easy PCB mounting
g183g32 Easy paralleling due to positive TC of VCEsat
g183g32 Low profile










Absolute maximum ratings













These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.




C2
Q2
NTC1
Q1
E
C1
E1
G1
NTC2
E2
G2






C1 C2
C2
NTC2
NTC1
E1
E
G2
E2
G2
E2
G1


Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
c
= 25°C 220
I
C
Continuous Collector Current
T
c
= 80°C 180
I
CM
Pulsed Collector Current T
c
= 25°C 630
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation Tc = 25°C 833 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 630A @ 600V
V
CES
= 600V
I
C
= 180A @ Tc = 80°C
Dual common source
NPT IGBT Power Module