APTGF150DH120
器件描述:Asymmetrical - Bridge NPT IGBT Power Module
文件大小:294.19KB,共5页
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器件资料摘要:
APTGF150DH120
A
P
T
G
F
1
5
0
D
H
1
2
0
–
R
e
v
1
M
a
r
c
h
,
2
0
0
4
APT website – http://www.advancedpower.com 1 - 5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
Tc = 25°C 200 I
C Continuous Collector Current T
c = 80°C 150
ICM Pulsed Collector Current Tc = 25°C 400
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation Tc = 25°C 1040 W
RBSOA Reverse Bias Safe Operating Area Tj = 150°C 300A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G4
E4
VBUSG1
E1
0/VBUS
OUT2
OUT1
VCES = 1200V
IC = 150A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Asymmetrical - Bridge
NPT IGBT Power Module