APTC60AM35SCT
A
P
T
C
60A
M
35S
C
T
– R
e
v 1
M
a
y,
2004
APT website – http://www.advancedpower.com 1 – 7







NTC2
OUT
VBUS
NTC1
0/VBUS
Q1
G1
Q2
S1
S2
G2







NTC2S1
OUT
OUT
NTC1
VBUS
0/VBUS
G2
S2
G1

Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 600 V
T
c
= 25°C 72
I
D
Continuous Drain Current
T
c
= 80°C 54
I
DM
Pulsed Drain current 288
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 35
mg87
P
D
Maximum Power Dissipation T
c
= 25°C 416 W
I
AR
Avalanche current (repetitive and non repetitive) 20 A
E
AR
Repetitive Avalanche Energy 1
E
AS
Single Pulse Avalanche Energy 1800
mJ
V
DSS
= 600V
R
DSon
= 35mg87 max @ Tj = 25°C
I
D
= 72A @ Tc = 25°C
Application
g183g32 Motor control
g183g32 Switched Mode Power Supplies
g183g32 Uninterruptible Power Supplies

Features
g183g32

- Ultra low R
DSon

- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated

g183g32 Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF

g183g32 Kelvin source for easy drive
g183g32 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
g183g32 Internal thermistor for temperature monitoring
g183g32 High level of integration

Benefits
g183g32 Outstanding performance at high frequency operation
g183g32 Direct mounting to heatsink (isolated package)
g183g32 Low junction to case thermal resistance
g183g32 Solderable terminals both for power and signal for
easy PCB mounting
g183g32 Low profile
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module