TO-264
Max
050-7148 Rev C 6-2004
G
D
S
Super Junction MOSFET
C
Power Semiconductors
OO LMOS
• Ultra low R
DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
g
• Avalanche Energy Rated
• TO-264 Max Package
APT94N60L2C3
600V 94A 0.035Ω
"COOLMOS
™
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 500µA)
Drain-Source On-State Resistance

2

(V
GS
= 10V, 60A)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V, T
J
= 150°C)
Gate-Source Leakage Current (V
GS
= ±20V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5.4mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
dv
/
dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS
= 480V, I
D
= 94A, T
J
= 125°C)
Repetitive Avalanche Current
7
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
600
0.03 0.035
1.0 50
500
±200
2.10 3 3.9
APT94N60L2C3
600
94
282
±20
±30
833
6.67
-55 to 150
300
50
20
1
1800