052-6283 Rev A 3-2006
APT50GF120JRDQ3TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 750µA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 75A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 75A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
mA
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT50GF120JRDQ3
1200
±30
120
64
225
225A @ 1200V
521
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 100°C
Pulsed Collector Current
1
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
1200
4.5 5.5 6.5
2.5 3.0
3.1
0.75
5.5
±100
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-
taxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated • Ultra Low Leakage Current
• Ultrafast Soft Recovery Anti-parallel Diode
FAST IGBT & FRED
®
S
O
T
-
2
2
7
ISOTOP
®
file # E145592
"UL Recognized"
G
E E
C
C
E
G
1200V

APT50GF120JRDQ3