MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
RF POWER MOSFETs
N- CHANNEL ENHANCEMENT MODE 200V 300W 45MHz
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial
RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of
operation.
• Specified 150 Volt, 40.68 MHz Characteristics:
• Output Power = 300 Watts.
• Gain = 16dB (Class AB)
• Efficiency = 75% (Class C)
• Low Cost Flangeless RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(ON)
I
DSS
I
GSS
g
fs
V
GS
(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
Drain-Source On-State Resistance
1
(V
GS

= 10V
,
I
D
= 6.5A
)
Zero Gate Voltage Drain Current (V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Forward Transconductance (V
DS
= 25V, I
D
= 6.5A)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
MIN TYP MAX
1000
0.90
25
250
±100
3.3 7 9
24
UNIT
Volts
ohms
µA
nA
mhos
Volts
Symbol
V
DSS
V
DGO
I
D
V
GS
P
D
R
θJC
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
ARF466FL
1000
1000
13
±30
450
0.30
-55 to 175
300
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
G
D
S
ARF466FL
050-4928 Rev A 2-2006
ARF466FL