050-7479 Rev A 5-2004
APT40GP90BTYPICAL PERFORMANCE CURVES
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss • SSOA Rated
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN TYP MAX
900
3 4.5 6
3.2 3.9
2.7
250
1000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250µA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 40A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
µA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT40GP90B
900
±20
±30
100
50
160
160A @ 900V
543
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
7
@ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
POWER MOS 7
®
IGBT
APT40GP90B
900V