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APT25GT120BR

器件描述:Thunderbolt IGBT
器件厂商:ADPOW [Advanced Power Technology]
文件大小:394.7KB,共6页
Sponsor by e络盟
器件资料摘要:
052-6268 Rev B 12-2005
APT25GT120BR(G)TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1.5mA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 25A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
µA
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT25GT120BR(G)
1200
±30
54
25
75
75A @ 1200V
347
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1

Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
C
E
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2 3.7
3.9
100
TBD
120
1200V
APT25GT120BR
APT25GT120BRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
The Thunderblot IGBT
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT
®
offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 50KHz
• Low Tail Current • Ultra Low Leakage Current
• RBSOA and SCSOA Rated
Thunderbolt IGBT
®
T
O
-
2
4
7
G
C
E