050-5842 Rev A 4-2004
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
APT12080JVFR
1200V 15A 0.800Ω
SOT-227
G
S
S
D
ISOTOP
®
"UL Recognized"
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
• Faster Switching • Avalanche Energy Rated
• Lower Leakage • Popular SOT-227 Package
POWER MOS V
®
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance

2

(V
GS
= 10V, I
D
= 7.5A)
Zero Gate Voltage Drain Current (V
DS
= 1200, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 960V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
µA
nA
Volts
MIN TYP MAX
1200
0.800
250
1000
±100
24
APT12080JVFR
1200
15
60
±30
±40
450
3.60
-55 to 150
300
15
50
2500
FREDFET
G
D
S