050-7446 Rev B 5-2005
APT13GP120BDQ1(G)TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500µA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
µA
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
APT13GP120BDQ1(G)
1200
±20
41
20
50
50A @ 960V
250
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Reverse Bias Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN TYP MAX
1200
3 4.5 6
3.3 3.9
3.0
500
3000
±100
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss • 100 kHz operation @ 600V, 10A
• Low Gate Charge • 50 kHz operation @ 600V, 16A
• Ultrafast Tail Current shutoff • RBSOA Rated
POWER MOS 7
®
IGBT
1200V
APT13GP120BDQ1
APT13GP120BDQ1G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
T
O
-
2
4
7
G
C
E
C
E
G