APT10M11JVRU2
A
P
T
10M
11J
V
R
U
2
– R
e
v 0 O
c
t
obe
r
,
2004

APT website – http://www.advancedpower.com
1 – 7








ISOTOP



Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K




Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 100 V
T
c
= 25°C 142
I
D
Continuous Drain Current
T
c
= 80°C 106
I
DM
Pulsed Drain current 576
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 11
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 450 W
I
AR
Avalanche current (repetitive and non repetitive) 144 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 2500
mJ
IF
AV
Maximum Average Forward Current Duty cycle=0.5 Tc = 90°C 30
IF
RMS
RMS Forward Current (Square wave, 50% duty) 47
A
V
DSS
= 100V
R
DSon
= 11mΩ max @ Tj = 25°C
I
D
= 142A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Brake switch

Features
• Power MOS V
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• ISOTOP
®
Package (SOT-227)
• Very low stray inductance
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Very rugged
• Low profile
ISOTOP
®
Boost chopper
MOSFET Power Module
K
D
G
S