Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Dynamic dv/dt Rating BV
DSS
675V
▼ Repetitive Avalanche Rated R
DS(ON)
10Ω
▼ Fast Switching I
D
0.2A
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 5V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 5V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data & specifications subject to change without notice
APA2N70K
0.5
-55 to 150
Parameter
1
0.2
0.13
Parameter Rating
675
201130020
Storage Temperature Range -55 to 150
0.5
1.13
Linear Derating Factor 0.01
0.5
± 30
G
D
S
D
D
S
G
SOT-223
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.