Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
20V
▼ Capable of 2.5V gate drive R
DS(ON)
14mΩ
▼ Surface mount package I
D
38A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 4 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Data and specifications subject to change without notice 200908052-1/4
AP9T18GH/J
Pb Free Plating Product
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage ±16
Continuous Drain Current, V
GS
@ 4.5V 38
Continuous Drain Current, V
GS
@ 4.5V 24
Pulsed Drain Current
1
140
Total Power Dissipation 31.3
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.25
Thermal Data
Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S TO-251(J)
G
D
S
TO-252(H)
G
D
S