Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5896 Rev D 8-2003
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250 µA)
On State Drain Current

2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 12V)
Drain-Source On-State Resistance
2
(V
GS
= 12V, 29A)
Zero Gate Voltage Drain Current (V
DS
= 500V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 400V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
MIN TYP MAX
500
58
0.09
25
250
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
APT Website - http://www.advancedpower.com
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
• Higher FBSOA
• Higher Power Dissipation
• Popular T-MAX™ or TO-264 Package
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL502B2-L
500
58
232
±30
±40
730
5.84
-55 to 150
300
58
50
3000
T-MAX™
TO-264
B2
APL502B2
APL502L
500V 58A 0.090Ω
G
D
S
L