Advanced Power 2N AND 2P-CHANNEL ENHANCEMENT
Electronics Corp. MODE POWER MOSFET
▼ Simple Drive Requirement N-CH BV
DSS
35V
▼ Low On-resistance R
DS(ON)
48mΩ
▼ Full Bridge Application on I
D
4.3A
LCD Monitor Inverter P-CH BV
DSS
-35V
R
DS(ON)
72mΩ
Description I
D
-3.6A
Absolute Maximum Ratings
Symbol Parameter Rating Units
N-channel P-channel
V
DS
Drain-Source Voltage 35 -35 V
V
GS
Gate-Source Voltage ± 20 ± 20 V
I
D
@T
A
=25℃ Continuous Drain Current
3
4.3 -3.6 A
I
D
@T
A
=70℃ Continuous Drain Current
3
3.4 -2.8 A
I
DM
Pulsed Drain Current
1
20 -20 A
P
D
@T
A
=25℃ Total Power Dissipation 1.38 W
Linear Derating Factor 0.01 W/℃
T
STG
Storage Temperature Range -55 to 150 ℃
T
J
Operating Junction Temperature Range -55 to 150 ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice
Parameter
200920041
AP9934GM
Thermal Data
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N1G
N1D/P1D
N1S/N2S
N2G
P1G
P1S/P2S
N2D/P2D
P2G
SO-8
N1G
N1S
P1G
P1S
P1N1D
N2G
N2S
P2G
P2S
P2N2D