Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low on-resistance BV
DSS
20V
▼ Capable of 2.5V gate drive R
DS(ON)
23mΩ
▼ Optimal DC/DC battery application I
D
5A

Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 125 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 1
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.008
Drain Current
3
, V
GS
@ 4.5V 3.5
Pulsed Drain Current
1
25
Gate-Source Voltage ±12
Drain Current
3
, V
GS
@ 4.5V 5
Parameter Rating
Drain-Source Voltage 20
200206031
AP9928GEO
Pb Free Plating Product
S1
G1
D1
S2
G2
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8