Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BV
DSS
60V
▼ Single Drive Requirement R
DS(ON)
18mΩ
▼ Surface Mount Package I
D
60A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
C
=25℃ A
I
D
@T
C
=100℃ A
I
DM
A
P
D
@T
C
=25℃ W
W/℃
I
AR
A
T
STG
℃
T
J
℃
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 1.4 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 89
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.7
Avalanche Current
3
Continuous Drain Current, V
GS
@ 10V 38
Pulsed Drain Current
1
230
Gate-Source Voltage ±25
Continuous Drain Current, V
GS
@ 10V 60
Parameter Rating
Drain-Source Voltage 60
Pb Free Plating Product
200218051
AP9972GR
30
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)