Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low on-resistance BV
DSS
20V
▼ Capable of 2.5V gate drive R
DS(ON)
32mΩ
▼ Surface mount package I
D
4.7A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 125 ℃/W
Data and specifications subject to change without notice
AP9926TGO
Pb Free Plating Product
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage ±12
Continuous Drain Current
3
4.7
Continuous Drain Current
3
3.8
Pulsed Drain Current
1
20
Total Power Dissipation 1
Linear Derating Factor 0.008
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data
Parameter
200315051
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8
G2
D2
S2
G1
D1
S1