Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low on-resistance BV
DSS
16V
▼ Capable of 2.5V gate drive R
DS(ON)
27mΩ
▼ Surface mount package I
D
7A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 62.5 ℃/W
Data and specifications subject to change without notice
AP9926EM-A
Parameter Rating
Drain-Source Voltage 16
Gate-Source Voltage ±12
Continuous Drain Current
3
7
Continuous Drain Current
3
5.6
Pulsed Drain Current
1
20
Total Power Dissipation 2
Linear Derating Factor 0.016
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data
Parameter
201112041
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
S1
G1
D1
S2
G2
D2