Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
60V
▼ Lower Gate Charge R
DS(ON)
64mΩ
▼ Fast Switching Characteristic I
D
4.8A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 50 ℃/W
Data and specifications subject to change without notice 200614041
AP9478M
Rating
60
±25
4.8
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
3.8
Pulsed Drain Current
1
30
2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Storage Temperature Range
Thermal Data
Parameter
Total Power Dissipation
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
S
S
S
G
D
D
D
D
SO-8