Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BV
DSS
60V
▼ Lower Gate Charge R
DS(ON)
90mΩ
▼ Fast Switching Characteristic I
D
4A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 50 ℃/W
Data and specifications subject to change without notice 200830041
AP9477GM
Rating
60
±25
4
0.02
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Storage Temperature Range
Continuous Drain Current
3
3.1
Pulsed Drain Current
1
20
Pb Free Plating Product
Thermal Data
Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
S
S
S
G
D
D
D
D
SO-8